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TSM2N7002E
60V N-Channel MOSFET
SOT-23 SOT-323
Pin Definition: 1. Gate 2. Source 3. Drain
PRODUCT SUMMARY VDS (V) RDS(on)()
60 3 @ VGS = 10V 4 @ VGS = 4.5V
ID (mA)
300 200
Features
Low On-Resistance: 3 Low Input and Output Leakage
Block Diagram
Application
Direct Logic-Level Interface: TTL/CMOS Solid-State Relays
Ordering Information
Part No.
TSM2N7002ECX RF TSM2N7002ECU RF
Package
SOT-23 SOT-323
Packing
3Kpcs / 7" Reel 3Kpcs / 7" Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C
Limit
60 20 300 1 300 350 220 +150 -55 to +150
Unit
V V mA A mA mW
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
TL RJA
Limit
5 357
Unit
S
o
C/W
Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. c. The power dissipation of the package may result in a continuous drain current.
1/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 10A VDS = VGS, ID = 250A VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V VGS = 10V, VDS = 7.5V VGS = 4.5V, VDS = 10V VGS = 10V, ID = 300mA VGS = 4.5V, ID = 200mA VDS = 15V, ID = 300mA IS = 300mA, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off)
Min
60 1.0 --800 500 ---------------
Typ
----1300 700 1.9 2.7 320 0.9 0.4 0.06 0.06 20 11 4 7.5 6 7.5 3
Max
-2.5 100 1.0 --3 4 -1.2 0.6 --50 25 5 20 -20 --
Unit
V V nA A mA mS V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 10V, ID = 250mA, VGS = 4.5V VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
VDD = 30V, ID = 100mA, VGEN = 10V,
nS
RG = 10 Turn-Off Fall Time tf Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.
2/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
SOT-23 Mechanical Drawing
DIM A A1 B C D E F G H I J
SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5 10 5 10
Marking Diagram
2E = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
5/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
SOT-323 Mechanical Drawing
DIM A A1 bp C D E e e1 He Lp Q W
SOT-323 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.0315 0.0433 -0.10 -0.0039 0.30 0.40 0.0118 0.0157 0.10 0.25 0.0039 0.0098 1.80 2.20 0.0709 0.0866 1.15 1.35 0.0453 0.0531 1.30 -0.0512 -0.65 -0.0256 -2.00 2.20 0.0787 0.0866 0.15 0.45 0.0059 0.0177 0.13 0.23 0.0051 0.0091 0.20 -0.0079 -o o 10 -10 --
Marking Diagram
2E = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
6/7
Version: A07
TSM2N7002E
60V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
7/7
Version: A07

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